| PART |
Description |
Maker |
| BF994S Q62702-F1020 BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners)
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 4CX250B-M |
RADIAL BEAM POWER TETRODE
|
Communications & Power Industries, Inc.
|
| BF994SA BF994SB BF994S BF994 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| Q67006-A5150 Q67000-A5150 TUA2019-5X TUA2019-5XGEG |
VHF I/VHF II/UHF-Tuner IC
VHF I / VHF II / UHF-Tuner IC 甚高频的I /甚高频二/超高频调谐器IC
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MAX2630 MAX2630EUS-T MAX2630-MAX2633 MAX2631EUK-T |
VHF-to-Microwave, 3V, General-Purpose Amplifiers 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
"VHF to Microwave, 3V, General-Purpose Amplifiers"
VHF-to-Microwave, 3V,General-Purpose Amplifiers
VHF-to-Microwave 3V General-Purpose Amplifiers
VHF-to-Microwave / 3V / General-Purpose Amplifiers
|
Maxim Integrated Products, Inc.
Maixm
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| HN3C01F |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC3501 |
VHF AMPLIFIER VHF TV TUNER MIXER, OSCILLATOR 甚高频功放甚高频电视调谐器混频器，振荡器
From old datasheet system
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BG3430R |
DUAL N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BF1012S |
Silicon N-Channel MOSFET Tetrode
|
Infineon
|
